주요이력

• 1992. 03. – 1996. 02. : B.S, EE, Seoul National University
• 1998. 08. – 2003. 08. : M.S/Ph.D, ECE, Cornell University
• 2003. 08. – 2007. 08. : Senior Engineer, Semiconductor R&D Center, Samsung Electronics
• 2015. 09. – 2016. 08. : U.C. San Diego Visiting Scholar (Qualcomm Institute)
• 2007. 09. – Present : Electronic and Electrical Engineering, Hongik University

대표논문
(최소 3개, Reference 표기법으로 작성)

• J. H. Choi, H. Kim and H. Cha, "Recessed AlGaN/GaN Heterojunction-Based Hydrogen Sensor Operated by Reverse Bias Mode", IEEE sensors journal, vol. 21, no. 2, pp. 1244-1249, January, 2021
• V. C. Nguyen, K. KIM and H.Kim, "Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation", Micromachines, vol. 12, no. 4, pp. 400, April, 2021
• K. Kim, J. Jang, H. Kim, "Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method", Results in Physics, vol. 25, May, 2021

연구실 소개

• < 연구실명 : The Microelectronic Reliability Lab (MiReLab) >
• 본 연구실에서는 반도체 신뢰성 분석 및 평가에 대한 연구를 주로 진행하고 있으며 특히 GaN 기반 전력/고주파 소자와 극한환경용 소자에 대한 연구를 수행하고 있습니다.

주요이력

• 1990 – 1996 : B.S. degree in Electrical Engineering from Seoul National University, KOREA
• 1997 – 1999 : M.S. degree in Electrical Engineering from Seoul National University, KOREA
• 2000 – 2004: Ph.D. degree in Electrical and Computer Engineering from Cornell University, USA
• 2004 – 2005 : Postdoctoral Research Associate at Cornell University, USA
• 2005 – 2007 : Research Engineer at GE Global Research Center, USA
• 2007.09 – present : Electronic and Electrical Engineering, Hongik University

대표논문
(최소 3개, Reference 표기법으로 작성)

• H.-S. Kim, S.-W. Han, W.-H. Jang, C.-H. Cho, K.-S. Seo, J. Oh, and H.-Y. Cha, “Normally-off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric”, IEEE Electron Device Letters, vol. 38, no. 8, pp. 1090-1093, 2017.
• S.-W. Han, Y. Noh, M.-G. Jo, S.-H. Kim, J.-E. Oh, K.-S. Seo, and H.-Y. Cha, “Normally-off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE”, IEEE Electron Device Letters, vol. 37, no. 12, pp. 1613-1616, 2016.
• J.-H. Choi, T.-H. Park, J.-Y. Hur, and H.-Y. Cha, “AlGaN/GaN Heterojunction Hydrogen Sensor Using ZnO-Nanoparticles/Pd Dual Catalyst Layer”, Sensors and Actuators B: Chemical, vol. 325, p. 128946, 2020.
• J.-I. Kang, H. Kim, C.-Y. Han, H. Yang, S. R. Jeon, B. Park, and H.-Y. Cha, “Enhanced UV Absorption of GaN Photodiodes with a ZnO Quantum Dot Coating Layer”, Optics Express, vol. 26, no. 7, pp. 8296-8300, 2018.

연구실 소개

• < 연구실명 : ASTL >
• 본 연구실에서는 차호영 교수님의 지도하에 wide bandgap semiconductor를 활용한 친환경, 고효율 전력 소자 및 RF 소자 연구, 고감도 가스센서 및 UV 광센서 등에 대한 연구를 수행하고 있습니다.

주요이력

• 1993 – 1999 : Yonsei University, Bachelor
• 2001 – 2003 : University of Michigan at Ann Arbor, Master
• 2003 – 2007 : University of Michigan at Ann Arbor, Ph. D
• 2007 – 2009 : Qualcomm, Senior Engineer
• 2009 – 2015 : UNIST, Assistant Professor
• 2015 – 2019 : Kwangwoon Univ. Associate Professor
• 2019 - Present : Hongik Univ. Associate Professor

대표논문
(최소 3개, Reference 표기법으로 작성)

• J. Jeong and Y. Kim, "ASAD-RD: Accuracy Scalable Approximate Divider Based on Restoring Division for Energy Efficiency," Electronics, vol. 10, no. 1, 30, Dec. 28. 2020. (SCI)
• S. Kim, K. J. Han, Y. Kim and S. Kang, "Power Integrity Coanalysis Methodology for Multi-Domain High-Speed Memory Systems," in IEEE Access, vol. 7, July 15, 2019. (SCI)
• I. J Chang, Y. Kang, and Y. Kim, "Channel Length Biasing for Improving Read Margin of the 8T SRAM at Near Threshold Operation," Electronics, vol. 8, no. 6, 611, May 30, 2019. (SCI)
• M. Han, Y. Kim, "Efficient Implementation of Multichannel FM and T-DMB Repeater in FPGA with Automatic Gain Controller," Electronics, vol. 8, no. 5, 482, April 29, 2019. (SCI)
• S. Kim, S. Kang, K. J. Han, and Y. Kim, "Novel Adaptive Power Gating Strategy and Tapered TSV Structure in Multi-layer 3D IC," ACM Transactions on Design Automation of Electronic Systems (TODAES), vol. 21, no. 3, July 26, 2016. (SCI)
• Y. Kang, J. Choi, and Y. Kim, “A Wide Range On-Chip Leakage Sensor Using a Current-Frequency Converting Technique in 65-nm Technology Node,” IEEE Transactions on Circuits and Systems-II (TCAS-II), vol. 62, no. 9, May 20, 2015. (SCI)

연구실 소개

• < 연구실명 : IDEA (IC Design and Embedded-Application) Lab >
• 본 연구실에서는 김영민 교수님의 지도하에 인공지능(AI) 관련 회로 설계, FPGA/SoC 설계, 임베디드 시스템, 디지털 회로, CAD, 반도체모델링 등에 대한 연구를 수행 하고 있습니다.

주요이력

• 1993 – 2000 : 서울대학교, 재료공학부, 학사
• 2001 – 2007 : Northwestern University, 재료공학 박사
• 2007 – 2013 : 삼성전자 반도체연구소, 책임
• 2013 – 2018 : 홍익대학교 신소재공학과, 조교수
• 2018 – 현재 : 홍익대학교 신소재공학과, 부교수

대표논문
(최소 3개, Reference 표기법으로 작성)

• K. Min, D. Jung, and Y. Kwon, Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation, Sci. Rep. 11, 2447 (2021)
• H. Lee and Y. Kwon, Analysis of Stuck Reset Failure in Phase-Change Memory by Calculating Phase-Change Stress using Finite Element Simulation, Phys. Status Solidi RRL 15, 200419 (2021)
• M. Shin, K. Min, H. Shim, Y. Kwon, Investigation on Phase-change Synapse Devices for More Gradual Switching, J. Semicond. Technol. Sci. 19, 8-17 (2019)

연구실 소개

• < 연구실명 : 전산재료공학연구실 (CMEL) >
• 본 연구실에서는 권용우 교수님의 지도 하에 상변화소자, 저항변화소자, 박막공정 등에 대한 시뮬레이션 연구를 수행하고 있습니다. 더 구체적으로는 박막소재에 열적, 전기적, 기계적인 자극이 가해졌을 때, 그에 따른 박막의 미세구조 및 소자의 특성을 예측하는 시뮬레이션 기술을 개발하여, 소자 및 공정 설계에 활용하고 있습니다. 시뮬레이션은 상장법(phase-field method)을 유한요소해석(finite element analysis)과 연계하여 구축하고 있으며, 필요에 따라 TCAD를 활용하기도 합니다.

주요이력

• 2005 – 2009 : B.S. in Chemical and Biological Engineering, Seoul National University
• 2009 – 2014 : Ph.D. in Chemical Engineering, Stanford University
• 2015 – 2017 : Assistant Professor, Department of Chemistry, Chungnam National University
• 2017 – present : Assistant Professor, Department of Chemical Engineering, Hongik University

대표논문
(최소 3개, Reference 표기법으로 작성)

• Effects of Al Precursors on Deposition Selectivity of Atomic Layer Deposition of Al2O3 using Ethanethiol Inhibitor, Chemistry of Materials, 2020
• Thermal Annealing of Molecular Layer Deposited Indicone Toward Area-Selective Atomic Layer Deposition, ACS Applied Materials & Interfaces, 2020
• Molecular Adsorption of NH3 and NO2 on Zr and Hf Dichalcogenides (S, Se, Te) Monolayers: A Density Functional Theory Study, Nanomaterials, 2020

연구실 소개

• < 연구실명 : 계면설계 연구실 >
• 본 연구실에서는 송봉근 교수님의 지도하에 Fundamental surface chemical phenomena, Chemistry of atomic layer deposition (ALD), Area-selective atomic layer deposition (AS-ALD), ALD of multicomponent materials, ALD precursor development, Chemistry of atomic layer etching (ALE), in situ analysis of reacting surfaces 등에 대한 연구를 수행하고 있습니다.